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Tommaso Losi was born in Garbagnate Milanese (Italy) in 1994. He studied at Politecnico di Milano, where he obtained both his bachelor and master degree in Materials Engineering and Nanotechnology cum laude. He got his PhD in Physics at CNST@Polimi (Center for Nano Science and Technology - Italian Institute of Technology) working on the development of high performing organic field-effect transistors for high frequency applications with a thesis entitled "Solution Processed Organic Field-Effect Transistors for High-Frequency Printed Electronics", under the supervision of Dr. M. Caironi. Currently he is a Post Doc. in the group of Printed Molecular Electronic and his research field is focused on the optimization of flexible low voltage printed organic transistors for IoT applications.